Title :
Ultrathin titanium passive devices fabrication
Author :
Ecoffey, Serge ; Morissette, J.-F. ; Jedidi, N. ; Guilmain, Marc ; Nauenheim, C. ; Drouin, Dominique
Author_Institution :
Nanofabrication & Nanocharacterization Res. Center (CRN2), Univ. de Sherbrooke, Sherbrooke, QC, Canada
Abstract :
This paper presents physical and electrical characterizations of fabricated ultrathin titanium passive devices embedded in silicon dioxide. The nanowires and Ti/TiO2/Ti metal-insulator-metal capacitors are fabricated with a flexible process based on a nanodamascene technology. A model of the titanium resistivity versus thickness based on experimental data is proposed. The combination of the nanodamascene technology and resistance modeling allows the realization of ultrathin titanium passive devices with variable geometries and/or material through a tailored chemical mechanical planarization.
Keywords :
MIM devices; passive networks; titanium; Ti-TiO2-Ti; chemical mechanical planarization; electrical characterization; metal-insulator-metal capacitors; nanodamascene technology; nanowires; physical characterization; resistance modeling; silicon dioxide; titanium resistivity; ultrathin titanium passive devices fabrication; Conductivity; Fabrication; Films; Planarization; Resistance; Titanium; chemical mechanical planarization; passive devices; resistivity; titanium;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144494
