Ultrathin titanium passive devices fabrication

Author

Ecoffey, Serge ; Morissette, J.-F. ; Jedidi, N. ; Guilmain, Marc ; Nauenheim, C. ; Drouin, Dominique

Author_Institution

Nanofabrication & Nanocharacterization Res. Center (CRN2), Univ. de Sherbrooke, Sherbrooke, QC, Canada

fYear

2011

fDate

15-18 Aug. 2011

Firstpage

1689

Lastpage

1692

Abstract

This paper presents physical and electrical characterizations of fabricated ultrathin titanium passive devices embedded in silicon dioxide. The nanowires and Ti/TiO₂/Ti metal-insulator-metal capacitors are fabricated with a flexible process based on a nanodamascene technology. A model of the titanium resistivity versus thickness based on experimental data is proposed. The combination of the nanodamascene technology and resistance modeling allows the realization of ultrathin titanium passive devices with variable geometries and/or material through a tailored chemical mechanical planarization.

Keywords

MIM devices; passive networks; titanium; Ti-TiO₂-Ti; chemical mechanical planarization; electrical characterization; metal-insulator-metal capacitors; nanodamascene technology; nanowires; physical characterization; resistance modeling; silicon dioxide; titanium resistivity; ultrathin titanium passive devices fabrication; Conductivity; Fabrication; Films; Planarization; Resistance; Titanium; chemical mechanical planarization; passive devices; resistivity; titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Conference_Location

Portland, OR

ISSN

1944-9399

Print_ISBN

978-1-4577-1514-3

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2011.6144494

Filename

6144494