Title :
Successful application of dry etching technique using CH4/H2 gas to InGaAs/InP photodiode
Author :
Hyun, Kyung-Sook ; Park, Chan-Yong ; Kim, Jeong Soo ; Park, Bong Dae
Author_Institution :
Electron. & Telecommun. Res. Inst., Taejeon, South Korea
fDate :
30 Oct-2 Nov 1995
Abstract :
In conclusion, we have demonstrated the successful application of CH4/H2 RIE to InGaAs/InP APD with very low leakage current less than 5 nA at 0.9 Vb, which was high enough to cause large leakage current if any RIE-induced defect existed. We believe that the RIE using CH4/H2 gas, which is less toxic and less corrosive compared to the chlorinated gases, will be widely used in many other optical device fabrications
Keywords :
avalanche photodiodes; etching; gallium arsenide; indium compounds; ion beam applications; leakage currents; optical fabrication; semiconductor technology; InGaAs-InP; InGaAs/InP photodiode; chlorinated gases; dry etching technique; large leakage current; low leakage current; optical device fabrications; Dark current; Dry etching; Hydrogen; Indium gallium arsenide; Indium phosphide; Plasma applications; Plasma density; Surface contamination; Surface morphology; Thickness control;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484624
