DocumentCode :
3228436
Title :
A Gate Dielectric Last Approach to Integrate Organic Based Devices on Plastic Substrates
Author :
Gowrisanker, Srinivas ; Ai, Yuming ; Quevedo-Lopez, M.A. ; Jia, Huiping ; Vogel, Eric ; Gnade, Bruce
Author_Institution :
Univ. of Texas, Richardson, TX
fYear :
2008
fDate :
21-24 Jan. 2008
Firstpage :
1
Lastpage :
3
Abstract :
In this work we demonstrate a photo-lithographic based process to integrate organic-based devices including rectifiers, ring oscillators, current mirrors, inverters, diodes and capacitors on flexible substrates for RFID and flexible display applications. Our integration method includes a seven mask photolithography process that incorporates several discrete devices built with pentacene as the semiconductor and parylene as the gate dielectric and inter-level dielectric (ILD). The maximum temperature for all processes is 120degC.
Keywords :
dielectric materials; flexible electronics; organic semiconductors; photolithography; substrates; RFID; capacitors; current mirrors; diodes; flexible display; flexible substrates; gate dielectric last approach; inter-level dielectric; inverters; mask photolithography process; organic based devices; parylene; pentacene; plastic substrates; rectifiers; ring oscillators; temperature 120 C; Capacitors; Dielectric devices; Dielectric substrates; Inverters; Mirrors; Plastics; Radiofrequency identification; Rectifiers; Ring oscillators; Semiconductor diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Flexible Electronics and Displays Conference and Exhibition, 2008
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2053-7
Electronic_ISBN :
978-1-4244-2054-4
Type :
conf
DOI :
10.1109/FEDC.2008.4483882
Filename :
4483882
Link To Document :
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