DocumentCode :
3228458
Title :
Thermal conductivity manipulation in lithographically patterned single crystal silicon phononic crystal structures
Author :
Kim, Bongsang ; Nguyen, Janet ; Reinke, Charles ; Shaner, Eric ; Harris, C. Thomas ; El-Kady, Ihab ; Olsson, Roy H., III
Author_Institution :
Adv. MEMS Dept., Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
2011
fDate :
18-21 Oct. 2011
Firstpage :
1308
Lastpage :
1311
Abstract :
The thermal conductivity of single crystal silicon was engineered using lithographically formed phononic crystals. Specifically, sub-micron periodic through-holes were patterned in 500nm-thick silicon membranes to construct phononic crystals, and through phonon scattering enhancement, heat transfer was significantly reduced. The thermal conductivity of silicon phononic crystals was measured as low as 32.6W/mK, which is a ~75% reduction compared to bulk silicon thermal conductivity. This corresponds to a 37% reduction even after taking into account the contributions of the thin-film and volume reduction effects, while the electrical conductivity was reduced only by as much as the volume reduction effect. The demonstrated method uses conventional lithography-based technologies that are directly applicable to diverse micro/nano-scale devices, leading toward huge performance improvements where heat management is important.
Keywords :
electrical conductivity; elemental semiconductors; heat transfer; lithography; membranes; phononic crystals; semiconductor thin films; silicon; thermal conductivity; Si; electrical conductivity; heat transfer; lithographical patterning; phonon scattering; silicon membranes; single-crystal silicon phononic crystal structure; size 500 nm; submicron periodic through-holes; thermal conductivity; thin film; volume reduction effect; Conductivity; Conductivity measurement; Crystals; Finite element methods; Silicon; Temperature measurement; Thermal conductivity; boundary scattering; heat transfer; phonon scattering; phononic crystals; thermal conductivity; thermal model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
ISSN :
1948-5719
Print_ISBN :
978-1-4577-1253-1
Type :
conf
DOI :
10.1109/ULTSYM.2011.0323
Filename :
6293330
Link To Document :
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