Title :
Compressively strained GaInP/AlGaInP metal clad structure for 650 nm laser diode
Author :
Oh, M. ; Park, H. ; Lee, C. ; Lim, G. ; Kim, T. ; Kim, J. ; Kim, T.
Author_Institution :
Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
30 Oct-2 Nov 1995
Abstract :
The compressively strained MQW structures for a 650 nm laser diode were investigated. The high performance was obtained with a metal clad ridge structure employing strained MQWs
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor epitaxial layers; vapour phase epitaxial growth; 650 nm; GaInP-AlGaInP; GaInP/AlGaInP metal clad structure; compressively strained MQW structures; laser diode; laser performance; metal clad ridge structure; strained MQWs; Capacitive sensors; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Optical materials; Quantum well devices; Substrates; Temperature dependence; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484643
