DocumentCode :
3228530
Title :
Ferroelectric PLZT films grown on metal foils for power electronics applications
Author :
Ma, Beihai ; Narayanan, Manoj ; Liu, Shanshan ; Chao, Sheng ; Balachandran, U.
Author_Institution :
Energy Syst. Div., Argonne Nat. Lab., Argonne, IL, USA
fYear :
2011
fDate :
24-27 July 2011
Firstpage :
1
Lastpage :
4
Abstract :
Ceramic films of high permittivity and breakdown strength are critical to advanced power electronic devices. We have grown ferroelectric films of lead lanthanum zirconate titanate (PLZT) on base metal foils by chemical solution deposition. We measured a dielectric constant of ≈700 and dielectric loss of ≈0.07 at -50°C and a dielectric constant of ≈2200 and dielectric loss of ≈0.06 at 150°C. At room temperature, we measured a leakage current density of ≈6.6 × 10-9 A/cm2, mean breakdown strength of 2.6 MV/cm, and energy density >;85 J/cm3. Highly accelerated lifetime testing (HALT) was performed to determine the reliability of these PLZT film-on-foil capacitors under high temperature and high field stress conditions. Samples were exposed to temperatures ranging from 100 to 150°C and electric fields ranging from 8.7 × 105 V/cm to 1.3 × 106 V/cm during HALT. The breakdown behavior of the samples was evaluated by Weibull analysis. The mean time to failure, >;3000 h, was projected at 100°C with a dc electric field of ≈2.6 × 105 V/cm.
Keywords :
Weibull distribution; current density; dielectric losses; electric breakdown; ferroelectric capacitors; ferroelectric ceramics; ferroelectric thin films; lanthanum compounds; lead compounds; leakage currents; permittivity; power electronics; PLZT; PLZT film-on-foil capacitors; Weibull analysis; advanced power electronic devices; base metal foils; breakdown behavior; ceramic films; chemical solution deposition; dc electric field; dielectric constant; dielectric loss; energy density; ferroelectric PLZT films; high field stress condition; high temperature condition; highly accelerated lifetime testing; lead lanthanum zirconate titanate; leakage current density; mean breakdown strength; permittivity; power electronics applications; temperature -50 degC; temperature 100 degC to 150 degC; temperature 293 K to 298 K; Capacitors; Current measurement; Dielectric measurements; Films; Nickel; Temperature measurement; Ferroelectricity; PLZT; breakdown strength; capacitor; ceramic film; dielectric property;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
Type :
conf
DOI :
10.1109/ISAF.2011.6014116
Filename :
6014116
Link To Document :
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