Title :
High-performance 1.3 μm lasers for analog and digital applications
Author :
Verdiell, Jean-Marc ; Welch, David F. ; Plano, Bill ; Duncan, Kurtis
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
InGaAsP lasers incorporating strained quantum wells have recently shown superior performance in the 1.3 μm band. We report both high-power, low RIN lasers and high-speed, low theshold lasers obtained from strained quantum well material. In conclusion, we have demonstrated high-performance 1.3 μm lasers obtained from strained quantum well material. Lasers can be optimized for both analog and digital applications
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser noise; laser transitions; optical communication equipment; quantum well lasers; 1.3 mum; InGaAsP; InGaAsP lasers; analog applications; digital applications; high-performance 1.3 μm lasers; high-power; high-speed low theshold lasers; low RIN lasers; strained quantum well lasers; strained quantum well material; Bonding; Ceramics; Coatings; Optical arrays; Optical materials; Power lasers; Power transmission lines; Quantum well lasers; SONET; Wire;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484650
