DocumentCode
3228664
Title
High-performance 1.3 μm lasers for analog and digital applications
Author
Verdiell, Jean-Marc ; Welch, David F. ; Plano, Bill ; Duncan, Kurtis
Author_Institution
SDL Inc., San Jose, CA, USA
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
169
Abstract
InGaAsP lasers incorporating strained quantum wells have recently shown superior performance in the 1.3 μm band. We report both high-power, low RIN lasers and high-speed, low theshold lasers obtained from strained quantum well material. In conclusion, we have demonstrated high-performance 1.3 μm lasers obtained from strained quantum well material. Lasers can be optimized for both analog and digital applications
Keywords
gallium arsenide; gallium compounds; indium compounds; laser noise; laser transitions; optical communication equipment; quantum well lasers; 1.3 mum; InGaAsP; InGaAsP lasers; analog applications; digital applications; high-performance 1.3 μm lasers; high-power; high-speed low theshold lasers; low RIN lasers; strained quantum well lasers; strained quantum well material; Bonding; Ceramics; Coatings; Optical arrays; Optical materials; Power lasers; Power transmission lines; Quantum well lasers; SONET; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484650
Filename
484650
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