Title :
Critical Cu concentration of enhanced oxidation generation on thin film SOI wafer
Author :
Okonogi, K. ; Kikuchi, H. ; Kitano, T.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
Examines relationship between enhanced oxide density and Cu concentration for various thicknesses of SOI layers. It is found that the decrease in SOI layer thickness causes the decrease in critical Cu concentration for enhanced oxidation generation. Furthermore, it is found that Cu concentration close to contaminant level of current ULSI device fabrication process causes enhanced oxidation on SOI wafers with 0.1 μm SOI layer. It is necessary to pay attention to Cu contamination on SOI wafers with 0.1 μm SOI layer during ULSI device fabrication process
Keywords :
CMOS integrated circuits; ULSI; integrated circuit measurement; integrated circuit reliability; integrated circuit yield; oxidation; silicon-on-insulator; 0.1 micron; Cu; IC reliability; IC yield; ULSI device fabrication; contaminant level; enhanced oxidation generation; thin film SOI wafer; Degradation; Fabrication; Optical films; Optical microscopy; Oxidation; Scanning electron microscopy; Surface contamination; Transistors; Transmission electron microscopy; Ultra large scale integration;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552482
