Critical Cu concentration of enhanced oxidation generation on thin film SOI wafer

Author

Okonogi, K. ; Kikuchi, H. ; Kitano, T.

Author_Institution

ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

38

Lastpage

39

Abstract

Examines relationship between enhanced oxide density and Cu concentration for various thicknesses of SOI layers. It is found that the decrease in SOI layer thickness causes the decrease in critical Cu concentration for enhanced oxidation generation. Furthermore, it is found that Cu concentration close to contaminant level of current ULSI device fabrication process causes enhanced oxidation on SOI wafers with 0.1 μm SOI layer. It is necessary to pay attention to Cu contamination on SOI wafers with 0.1 μm SOI layer during ULSI device fabrication process

Keywords

CMOS integrated circuits; ULSI; integrated circuit measurement; integrated circuit reliability; integrated circuit yield; oxidation; silicon-on-insulator; 0.1 micron; Cu; IC reliability; IC yield; ULSI device fabrication; contaminant level; enhanced oxidation generation; thin film SOI wafer; Degradation; Fabrication; Optical films; Optical microscopy; Oxidation; Scanning electron microscopy; Surface contamination; Transistors; Transmission electron microscopy; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552482

Filename

552482