DocumentCode :
3229000
Title :
Temperature stability of Love wave device with multi-guide layers of SiO2/SU-8
Author :
Hou, Jiaoli ; Wang, Wen ; Liu, Minghua ; He, Shitang
Author_Institution :
Inst. of Acoust., Beijing, China
fYear :
2011
fDate :
18-21 Oct. 2011
Firstpage :
577
Lastpage :
580
Abstract :
Theoretical calculation have been performed for the temperature coefficient of frequency (TCF) of Love wave device with multi-guide layers by solving the coupled electromechanical field equations, and the optimal design parameters were extraction, leading to excellent temperature stability. Excellent temperature coefficient of the Love wave device with SU-8/SiO2 on ST-90°X quartz substrate is evaluated experimentally as only 2.3 ppm/°C, which agrees well with the calculated results.
Keywords :
Love waves; acoustic waveguides; piezoelectric devices; quartz; temperature; Love wave device; SiO2; coupled electromechanical field equation; multiguide layers; optimal design parameter; temperature coefficient of frequency; temperature stability; Electric potential; Stability analysis; Substrates; Temperature; Temperature measurement; Temperature sensors; Love wave device; TCF; multi-waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
ISSN :
1948-5719
Print_ISBN :
978-1-4577-1253-1
Type :
conf
DOI :
10.1109/ULTSYM.2011.0139
Filename :
6293360
Link To Document :
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