• DocumentCode
    3229000
  • Title

    Temperature stability of Love wave device with multi-guide layers of SiO2/SU-8

  • Author

    Hou, Jiaoli ; Wang, Wen ; Liu, Minghua ; He, Shitang

  • Author_Institution
    Inst. of Acoust., Beijing, China
  • fYear
    2011
  • fDate
    18-21 Oct. 2011
  • Firstpage
    577
  • Lastpage
    580
  • Abstract
    Theoretical calculation have been performed for the temperature coefficient of frequency (TCF) of Love wave device with multi-guide layers by solving the coupled electromechanical field equations, and the optimal design parameters were extraction, leading to excellent temperature stability. Excellent temperature coefficient of the Love wave device with SU-8/SiO2 on ST-90°X quartz substrate is evaluated experimentally as only 2.3 ppm/°C, which agrees well with the calculated results.
  • Keywords
    Love waves; acoustic waveguides; piezoelectric devices; quartz; temperature; Love wave device; SiO2; coupled electromechanical field equation; multiguide layers; optimal design parameter; temperature coefficient of frequency; temperature stability; Electric potential; Stability analysis; Substrates; Temperature; Temperature measurement; Temperature sensors; Love wave device; TCF; multi-waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2011 IEEE International
  • Conference_Location
    Orlando, FL
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4577-1253-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2011.0139
  • Filename
    6293360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3229000