Design and fabrication of planar GaAs Schottky barrier diodes for submillimeter-wave applications

Author

Mou, Jinchao ; Yuan, Yong ; Lv, Xin ; Yu, Weihua ; He, Dawei ; Wang, Jinghui ; Xiao, Guohua

Author_Institution

Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China

fYear

2010

fDate

8-11 May 2010

Firstpage

1746

Lastpage

1749

Abstract

The design consideration and fabrication of a planar GaAs Schottky barrier diode with cutoff frequency up to 650 GHz is presented in this paper. The theory and design principle was given at the beginning. Then, the key material and geometrical parameters are analyzed using electron behavior analysis and the finite element method. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Finally the Schottky diode was fabricated and measured.

Keywords

Schottky diodes; finite element analysis; gallium arsenide; submillimetre wave diodes; GaAs; electron behavior analysis; finite element method; geometrical parameter; planar Schottky barrier diode; submillimeter-wave application; Anodes; Cutoff frequency; Fabrication; Gallium arsenide; Parasitic capacitance; Schottky barriers; Schottky diodes; Semiconductor diodes; Submillimeter wave communication; Submillimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524833

Filename

5524833