Title :
Design and fabrication of planar GaAs Schottky barrier diodes for submillimeter-wave applications
Author :
Mou, Jinchao ; Yuan, Yong ; Lv, Xin ; Yu, Weihua ; He, Dawei ; Wang, Jinghui ; Xiao, Guohua
Author_Institution :
Lab. of Microwave Commun. & Electron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
The design consideration and fabrication of a planar GaAs Schottky barrier diode with cutoff frequency up to 650 GHz is presented in this paper. The theory and design principle was given at the beginning. Then, the key material and geometrical parameters are analyzed using electron behavior analysis and the finite element method. Considering the analyzed results as well as fabrication cost and complexity, a group of trade-off parameters was determined. Finally the Schottky diode was fabricated and measured.
Keywords :
Schottky diodes; finite element analysis; gallium arsenide; submillimetre wave diodes; GaAs; electron behavior analysis; finite element method; geometrical parameter; planar Schottky barrier diode; submillimeter-wave application; Anodes; Cutoff frequency; Fabrication; Gallium arsenide; Parasitic capacitance; Schottky barriers; Schottky diodes; Semiconductor diodes; Submillimeter wave communication; Submillimeter wave technology;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524833
