Title :
Effects of (Gd,Mn)-doping on ferroelectric properties of BiFeO3 thin films prepared using chemical solution deposition
Author :
Kim, J.W. ; Do, D. ; Kim, S.S. ; Lee, M.H. ; Sung, Y.S. ; Kim, M.H. ; Song, T.K.
Author_Institution :
Dept. of Phys., Changwon Nat. Univ., Changwon, South Korea
Abstract :
Polycrystalline BiFeO3 (BFO) and (Gd, Mn) co-doped BiFeO3 (BGFMO) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. Formation of rhombohedrally distorted perovskite crystal structure for the BFO and the BGFMO thin films was confirmed by an x-ray diffraction and a Raman analysis. Improved ferroelectric properties were observed from the BGFMO compared to BFO thin film. The remnant polarization (2Pr) 105 μC/cm2 and the coercive field (2Ec) 959 kV/cm were observed from the BGFMO thin film at a maximum applied field of 1464 kV/cm. The leakage current density of the BGFMO thin film (3.9×10-6 A/cm2 at 100 kV/cm) was three orders of magnitude lower than that of the BFO thin film. In the BGFMO thin film, no polarization fatigue was observed up to 4.44×108 switching cycles. The controlled leakage current and improved ferroelectric properties for the co-doped thin film were well correlated with the change in microstructure and the compensation of oxygen vacancies.
Keywords :
Raman spectra; X-ray diffraction; bismuth compounds; crystal microstructure; crystal structure; current density; dielectric polarisation; ferroelectric coercive field; ferroelectric thin films; gadolinium; leakage currents; manganese; vacancies (crystal); BiFeO3; BiFeO3:Gd,Mn; Pt(111)-Ti-silica-Si(100) substrates; Pt-Ti-SiO2-Si; Raman analysis; Si; X-ray diffraction; XRD; chemical solution deposition method; coercive field; controlled leakage current; improved ferroelectric properties; leakage current density; maximum applied field; microstructure; oxygen vacancy compensation; polycrystalline BFO thin film; polycrystalline codoped BGFMO thin film; remnant polarization; rhombohedrally distorted perovskite crystal structure formation; switching cycles; Bismuth; Chemicals; Electric fields; Leakage current; Manganese; Switches; Temperature measurement; BiFeO3; chemical solution deposition method; co-doped thin film; ferroelectrics;
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
DOI :
10.1109/ISAF.2011.6014144
