Lithium-niobate-based surface acoustic wave device directly integrated on IC

Author

Park, KyeongDong ; Esashi, Masayoshi ; Tanaka, Shuji

Author_Institution

Dept. of Nanomech., Tohoku Univ., Sendai, Japan

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

1956

Lastpage

1959

Abstract

In this study, a LiNbO₃-based surface acoustic wave (SAW) resonator was directly integrated with a CMOS sustaining amplifier by new wafer-bonding-based integration technology. The developed integration technology has overcome large thermal expansion mismatch between LiNbO₃ (15~17 ppm/K along a-axis) and Si (2.6 ppm/K) by temporal wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporal wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500 MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -160 dBc/Hz at 500 kHz offset was achieved.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF oscillators; lithium compounds; phase noise; prototypes; surface acoustic wave resonators; thermal expansion; wafer bonding; CMOS sustaining amplifier; IC; LiNbO₃; LiNbO₃-based surface acoustic wave resonator; UV polymer bonding; a-axis; frequency 500 MHz; lithium-niobate-based surface acoustic wave device; low-temperature Au-Au bonding; one-chip SAW oscillator; phase noise; plasma surface activation; temporal wafer supporting; thermal expansion; wafer-bonding-based integration technology; Gold; Integrated circuits; Lithium niobate; Optical resonators; Oscillators; Silicon; Surface acoustic waves; Integration; Lithium niobate; Phase noise; SAW oscillator; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2011 IEEE International

Conference_Location

Orlando, FL

ISSN

1948-5719

Print_ISBN

978-1-4577-1253-1

Type

conf

DOI

10.1109/ULTSYM.2011.0487

Filename

6293368