Title :
Reduction in surface roughness of SIMOX substrate by H2 annealing
Author :
Kunii, Yasuo ; Nanashima, Sadao ; Nagase, Masao ; Izumi, Katsutoshi
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
The surface roughness of SIMOX substrate before gate oxidation should be controlled to assure ideal dielectric properties and the reliability of thin gate oxide films for future ULSIs. The atomic-scale structure of the bulk or epi Si surface has been studied after H2 annealing and epitaxial growth. However, the effect of H2 annealing on SIMOX substrate has not been extensively studied. This paper describes the change of the SIMOX substrate surface morphology induced by H2 annealing at 1000-1100 °C for 0.5-2 hours. The morphology of the SIMOX substrate surface was observed by atomic force microscopy (AFM). We found that an atomic step-and-terrace morphology appeared after the annealing of the (100) SIMOX substrates in H2 ambient at 1000-1100°C and that the surface roughness was reduced significantly by the annealing
Keywords :
MOS integrated circuits; SIMOX; ULSI; annealing; atomic force microscopy; integrated circuit measurement; integrated circuit reliability; surface topography; 0.5 to 2 h; 1000 to 1100 degC; H2; SIMOX substrate; ULSI; annealing; atomic force microscopy; atomic-scale structure; gate oxide films; ideal dielectric properties; reliability; step-and-terrace morphology; surface roughness; Annealing; Atomic force microscopy; Atomic layer deposition; Dielectric substrates; Dielectric thin films; Oxidation; Rough surfaces; Surface morphology; Surface roughness; Ultra large scale integration;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552484
