Title :
Improved SiC MESFET small-signal equivalent circuit and optimizing method
Author :
Liu, Ying ; Chen, Yongbo ; Guo, Yunchuan ; Xu, Ruimin
Author_Institution :
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An improved small-signal equivalent circuit and the related novel parameter optimizing method (optimizing a group of selected parameters to fit a specific S-parameter over a specific frequency range) for SiC MESFET devices are proposed in this paper. The initial values of parasitic parameters and intrinsic parameters have been extracted based on this improved model. The novel method has been used to optimize all the parameters over 0.5~20 GHz. Comparing the simulation result with the testing data and the result in the reference, it can be found that the simulation result of improved model fits with testing data better than the reference. It shows the accuracy of this small-signal equivalent circuit has been improved, and the optimizing method is simple and efficient.
Keywords :
S-parameters; Schottky gate field effect transistors; circuit optimisation; equivalent circuits; MESFET; S-parameter; SiC; intrinsic parameter; parameter optimizing method; parasitic parameter; small-signal equivalent circuit; Circuit simulation; Circuit testing; Data mining; Equivalent circuits; Frequency; MESFET circuits; Mathematical model; Optimization methods; Scattering parameters; Silicon carbide;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524844
