Title :
Effect of different annealing methods on the properties of PSTT thin films
Author :
Zhu, Jianguo ; Yan, Dongxu ; Li, Xuedong ; Chen, Xiaolong ; Liu, Hong ; Xiao, Dingquan
Author_Institution :
Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China
Abstract :
0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5) thin films were prepared on LaNiO3/SiO2/Si substrate by RF sputtering, and the films were annealed by one-step rapid thermal annealing (OSRTA) and two-steps rapid thermal annealing (TSRTA), respectively. Results show that an appropriate repeated heat treatment could improve ferroelectric and dielectric properties of PSTT5 film, Pr and Ec of PSTT5 thin films annealed by optimal conditions are 11.88μC/cm2 and 53.71 kV/cm, respectively.
Keywords :
ferroelectric thin films; lead compounds; rapid thermal annealing; sputter deposition; LaNiO3-SiO2-Si; PSTT thin films; Pb(Sc0.5Ta0.5)O3-PbTiO3; dielectric properties; ferroelectric materials; ferroelectric properties; one-step rapid thermal annealing; rf sputter deposition; two-steps rapid thermal annealing; Annealing; Films; Leakage current; Radio frequency; Sputtering; Substrates; Temperature; PSTT5; RF sputtering; rapid thermal annealing; thin film;
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
DOI :
10.1109/ISAF.2011.6014154
