• DocumentCode
    3229272
  • Title

    Effect of different annealing methods on the properties of PSTT thin films

  • Author

    Zhu, Jianguo ; Yan, Dongxu ; Li, Xuedong ; Chen, Xiaolong ; Liu, Hong ; Xiao, Dingquan

  • Author_Institution
    Coll. of Mater. Sci. & Eng., Sichuan Univ., Chengdu, China
  • fYear
    2011
  • fDate
    24-27 July 2011
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3(PSTT5) thin films were prepared on LaNiO3/SiO2/Si substrate by RF sputtering, and the films were annealed by one-step rapid thermal annealing (OSRTA) and two-steps rapid thermal annealing (TSRTA), respectively. Results show that an appropriate repeated heat treatment could improve ferroelectric and dielectric properties of PSTT5 film, Pr and Ec of PSTT5 thin films annealed by optimal conditions are 11.88μC/cm2 and 53.71 kV/cm, respectively.
  • Keywords
    ferroelectric thin films; lead compounds; rapid thermal annealing; sputter deposition; LaNiO3-SiO2-Si; PSTT thin films; Pb(Sc0.5Ta0.5)O3-PbTiO3; dielectric properties; ferroelectric materials; ferroelectric properties; one-step rapid thermal annealing; rf sputter deposition; two-steps rapid thermal annealing; Annealing; Films; Leakage current; Radio frequency; Sputtering; Substrates; Temperature; PSTT5; RF sputtering; rapid thermal annealing; thin film;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
  • Conference_Location
    Vancouver, BC
  • Print_ISBN
    978-1-4577-1162-6
  • Electronic_ISBN
    978-1-4577-1161-9
  • Type

    conf

  • DOI
    10.1109/ISAF.2011.6014154
  • Filename
    6014154
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3229272