• DocumentCode
    3229376
  • Title

    New types of left-handed materials based on the Z-shaped metal structure

  • Author

    Wang, Haixia ; Lu, Yinghua ; Zhang, Hongxin ; Zhang, Shen

  • Author_Institution
    Sch. of Electron. Eng., Beijing Univ. of Posts & Telecommun., Beijing, China
  • fYear
    2010
  • fDate
    8-11 May 2010
  • Firstpage
    1784
  • Lastpage
    1787
  • Abstract
    Based on a Z-shaped metal structure, two new types of left-handed materials (LHMs): LHM with units of off-plane anti-symmetric Z-shapes (OPAZ) and LHM with units of in-plane orthogonal Z-shapes (IPOZ) are proposed. In the OPAZ LHMs, the double-negative left-handed band is proved to be in the range from 9.35 GHz to 10.67 GHz by extracting effective permittivity and permeability from the simulated scattering parameters. While in the IPOZ LHMs, it finds the left-handed band is between 5.193 GHz and 5.617 GHz. The numerical study shows that the OPAZ LHMs exhibits a broader left-handed band with simpler configuration, and it is easier to be fabricated. The IPOZ LHMs do means a relatively narrow left-handed band, but it possesses an attractive advantage of 2D left-handedness, which means the LHMs could show a left-handed band without any limitation on the direction of k-vector as long as the H-field is perpendicular with the substrate plane. This property of left-handedness isotropy is of great significance in real-world application.
  • Keywords
    metamaterials; microwave materials; permittivity; OPAZ; Z-shaped metal structure; frequency 9.35 GHz to 10.67 GHz; in-plane orthogonal Z-shapes; left-handed materials; off-plane antisymmetric Z-shapes; simulated scattering parameters; Dielectric substrates; Electric variables; Electromagnetic wave polarization; Metamaterials; Microwave theory and techniques; Passband; Permeability; Permittivity; Resonance; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-5705-2
  • Type

    conf

  • DOI
    10.1109/ICMMT.2010.5524848
  • Filename
    5524848