Screening SIMOX for VLSI and ULSI chip production

Author

Liu, S.T. ; Fechner, P.S. ; Witcraft, W. ; Liou, H.K. ; Rekstad, J. ; Green, P. ; Yue, J.

Author_Institution

Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

46

Lastpage

47

Abstract

Thin film SOI technology has gained significant interest recently due to its potential application for ultra high density low power and radiation resistant electronics. Although significant progress has been made in reducing SIMOX defect density, the defects in SIMOX wafers are still important yield inhibitors to VLSI and ULSI circuits. Currently we are manufacturing large density SOI ASIC (400K usable gates) chips and 1M SOI SRAM chips including large 20 chip MCMs using SIMOX (BOX thickness ≈380 nm). In this paper we describe our screening methods to achieve VLSI and ULSI circuit production with reasonable yield

Keywords

SIMOX; SRAM chips; ULSI; VLSI; application specific integrated circuits; integrated circuit yield; IC manufacture; SIMOX defect density reduction; SIMOX screening; SOI SRAM chips; Si; ULSI chip production; VLSI chip production; large density SOI ASIC chips; radiation resistant electronics; thin film SOI technology; ultra high density low power electronics; yield inhibitors; Annealing; Boron; Circuits; Doping; Hafnium; Monitoring; Production; Silicon; Ultra large scale integration; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552486

Filename

552486