DocumentCode :
3229743
Title :
Temperature fields in the silica substrate induced by the scattering of laser interaction with a spherical microparticle
Author :
Ho, C.Y. ; Wen, M.Y.
Author_Institution :
Dept. of Mech. Eng., Hwa Hsia Inst. of Technol., Taipei, Taiwan
fYear :
2011
fDate :
27-29 May 2011
Firstpage :
663
Lastpage :
666
Abstract :
Laser interaction with a microparticle induces a strong near-field enhancement confined to a very small area, so this enhanced field can be applied to create nanoscale structures on the silicon substrate. In the process of the formation for the nanostructures, initially the silicon substrate is locally melted due to optical field enhancement between the spherical microparticle and the substrate. Then the melt and mushy zones occurs and nanostructures form after solidification. In order to obtain a further understanding for the formation of the nanostructures on the silicon substrate, a heat transfer model is employed to predict the shape and size of the nanoscale fusion zone on the silicon substrate in this proposal. This study calculated the fusion zone induced by the scattering field of laser incident on a microparticle.
Keywords :
elemental semiconductors; heat transfer; laser materials processing; nanofabrication; nanostructured materials; silicon; silicon compounds; solidification; substrates; zone melting; Si; SiO2; enhanced field; formation process; heat transfer model; laser incident; laser interaction; local melting; melt zone; mushy zone; nanoscale fusion zone shape; nanoscale fusion zone size; nanoscale structures; nanostructure formation; near-field enhancement; optical field enhancement; scattering field; silica substrate; silicon substrate; solidification; spherical microparticle; temperature fields; Heating; Silicon; laser; melting zone; microparticle; scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication Software and Networks (ICCSN), 2011 IEEE 3rd International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-61284-485-5
Type :
conf
DOI :
10.1109/ICCSN.2011.6014176
Filename :
6014176
Link To Document :
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