• DocumentCode
    3229743
  • Title

    Temperature fields in the silica substrate induced by the scattering of laser interaction with a spherical microparticle

  • Author

    Ho, C.Y. ; Wen, M.Y.

  • Author_Institution
    Dept. of Mech. Eng., Hwa Hsia Inst. of Technol., Taipei, Taiwan
  • fYear
    2011
  • fDate
    27-29 May 2011
  • Firstpage
    663
  • Lastpage
    666
  • Abstract
    Laser interaction with a microparticle induces a strong near-field enhancement confined to a very small area, so this enhanced field can be applied to create nanoscale structures on the silicon substrate. In the process of the formation for the nanostructures, initially the silicon substrate is locally melted due to optical field enhancement between the spherical microparticle and the substrate. Then the melt and mushy zones occurs and nanostructures form after solidification. In order to obtain a further understanding for the formation of the nanostructures on the silicon substrate, a heat transfer model is employed to predict the shape and size of the nanoscale fusion zone on the silicon substrate in this proposal. This study calculated the fusion zone induced by the scattering field of laser incident on a microparticle.
  • Keywords
    elemental semiconductors; heat transfer; laser materials processing; nanofabrication; nanostructured materials; silicon; silicon compounds; solidification; substrates; zone melting; Si; SiO2; enhanced field; formation process; heat transfer model; laser incident; laser interaction; local melting; melt zone; mushy zone; nanoscale fusion zone shape; nanoscale fusion zone size; nanoscale structures; nanostructure formation; near-field enhancement; optical field enhancement; scattering field; silica substrate; silicon substrate; solidification; spherical microparticle; temperature fields; Heating; Silicon; laser; melting zone; microparticle; scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communication Software and Networks (ICCSN), 2011 IEEE 3rd International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-61284-485-5
  • Type

    conf

  • DOI
    10.1109/ICCSN.2011.6014176
  • Filename
    6014176