Spectral reflectance as a non-destructive SIMOX quality evaluation technique

Author

Wetteroth, T. ; Wilson, S.R. ; Shin, H. ; Hong, S. ; Theodore, N.D. ; Huang, W.M. ; Racanelli, M.

Author_Institution

Mater. Res. & Strategic Technol., Motorola Inc., Mesa, AZ, USA

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

50

Lastpage

51

Abstract

Summary form only given. Spectral reflectance analysis versus wavelength can provide quick and valuable, non-destructive, information about the quality of SIMOX wafers prior to device fabrication in addition to thickness information. Advantages of commercial tools include; precision stages for automated patterned wafer measurements, speed, and a variety of spot sizes ranging from as small as 2.7 μm×2.7 μm to as large as 400 μm×300 μm. Use of the technique prior to processing can screen out suspect batches, identifying them for more intensive and destructive investigation. Device measurements were made on material with suspect reflectometry results. Device carrier lifetime and BVdss are reported. In addition, cross section Transmission Electron Micrographs (TEM) were taken to clarify physical attributes

Keywords

SIMOX; carrier lifetime; integrated circuit manufacture; integrated circuit measurement; optical variables measurement; reflectometry; SIMOX wafers; SOI; Si; automated patterned wafer measurements; carrier lifetime; cross section transmission electron micrographs; nondestructive SIMOX quality evaluation technique; spectral reflectance analysis; thickness information; Charge carrier lifetime; Electrons; Fabrication; Information analysis; Reflectivity; Reflectometry; Size measurement; Spectral analysis; Velocity measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552488

Filename

552488