Low power CMOS-magnetic nano-logic with increased bit controllability

Conventional magnetic logic using single-domain nanomagnets face severe challenges from power consumption, during field induced writing and clocking, and from poor selectivity over the logic cells. In this paper we report a novel CMOS integrated nanomagnetic logic architecture using Magnetic Tunnel Junctions (MTJs) as elemental cells. The integration details with 22nm CMOS technology is discussed and the feasibility of integration studied. The access transistors of the MTJs provide certain improvement in controllability over the bits of the logic. Increased controllability prevents unnecessary switching of the cells, as discussed in the paper, and hence saves power.