Effects of process conditions on the material characteristics of SIMOX with ITOX

High temperature oxidation of the low dose SIMOX has been shown to increase the thickness of the buried oxide, and improve its electrical characteristics in terms of pinhole densities, leakage current and breakdown voltage. The high temperature oxidation is a relatively new technique applied to low dose SIMOX and detailed characteristics of this material have not yet been finally explored. In our work on low dose SIMOX with internal thermal oxidation (ITOX), we observed the sensitivity of the characteristics of this material to the process conditions such as energy and dose of implanted oxygen, and temperature and ambient of the high temperature oxidation. Although the growth of the internal thermal oxide at the BOX interfaces, simultaneously accompanied by the oxidation of silicon inclusions in the BOX, was observed under wide range of process conditions, the leakage characteristics of the resultant buried oxide exhibited stronger dependencies on the process conditions than expected from the structural analysis. In this paper we continue to examine the effects of the process conditions on the structural and electrical characteristics of low dose SIMOX with ITOX