Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

Author

Trivedi, Samarth ; Grebel, Haim

Author_Institution

Dept. of Chem., New Jersey Inst. of Technol. (NJIT), Newark, NJ, USA

fYear

2011

fDate

15-18 Aug. 2011

Firstpage

1584

Lastpage

1587

Abstract

Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots´ photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.

Keywords

field effect transistors; graphene; photoluminescence; quantum dots; electrical characteristics; field-effect transistors; gate control; gate voltage; graphene channels; graphene layer; negative differential resistance; photo-induced effects; photoluminescence; pump light illumination; semiconductor quantum dots; source-drain voltage; FETs; Laser excitation; Logic gates; Photoluminescence; Pump lasers; Quantum dot lasers; Surface treatment; Field effect transistors (FET); enhanced photoluminescence; graphene channels; negative differential resistance (NDR); quantum dots (QD);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on

Conference_Location

Portland, OR

ISSN

1944-9399

Print_ISBN

978-1-4577-1514-3

Electronic_ISBN

1944-9399

Type

conf

DOI

10.1109/NANO.2011.6144614

Filename

6144614