DocumentCode
3230589
Title
FETs with superconducting channels
Author
Kleinsasser, A.W. ; Jackson, T.N.
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1989
fDate
7-9 Aug 1989
Firstpage
11
Lastpage
20
Abstract
The authors consider the implications of inducing superconducting properties in the channel of a FET by using superconductors as the source and drain metallizations. Under some circumstances the semiconductor source and drain regions can themselves become superconducting due to the proximity effect, i.e. the penetration of Cooper pairs into normal material at the interface with a superconductor. The proximity-effect regions can overlap if the channel is short enough, making the device a Josephson weak link in which a gate controls both superconductive and normal currents. The authors review the basic device concept and electrical characteristics, discuss several important materials-related issues, examine the present experimental and theoretical situation, and discuss the potential for applications. They describe recent work on superconducting In0.47Ga0.53 As JFETs (junction FETs) that addresses several of the issues raised by the present discussion
Keywords
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; metallisation; proximity effect; superconducting junction devices; Cooper pair penetration; FET; In0.47Ga0.53As; JFETs; Josephson weak link; drain metallizations; electrical characteristics; proximity effect; source metallisation; superconducting channels; Electrodes; FETs; Josephson junctions; MOS devices; Niobium alloys; Ohmic contacts; Silicon alloys; Superconductivity; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
Type
conf
DOI
10.1109/CORNEL.1989.79816
Filename
79816
Link To Document