An ultra-high-speed direct digital synthesizer MMIC

Author

Chen, Gaopeng ; Wu, Danyu ; Jin, Zhi ; Liu, Xinyu

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

fYear

2010

fDate

8-11 May 2010

Firstpage

217

Lastpage

220

Abstract

This paper presents an ultra-high-speed direct digital frequency synthesizer (DDS) microwave monolithic integrated circuit (MMIC) implemented in 1μm GaAs HBT technology. The DDS has the capabilities of direct frequency modulations with 8-bit frequency resolutions. Utilizing a Double-Edge-Trigger (DET) 8-stage pipeline accumulator with sine-weighted DAC based ROM-less architecture, this DDS MMIC can maximize the utilization ratio of GaAs HBT´s high-speed potential. With an external clock output frequency of 5GHz, the DDS can output sine signal of up to 5GHz frequency giving an average Spurious Free Dynamic Range (SFDR) of 23.24dBc through the first Nyquist band. The DDS MMIC consumes 2.4W of DC power from a single -4.6V DC supply. Using 1651 GaAs HBT transistors, the total area of the DDS chip is 2.4 × 2.0mm².

Keywords

III-V semiconductors; MMIC; digital-analogue conversion; direct digital synthesis; gallium arsenide; heterojunction bipolar transistors; DDS chip; GaAs; HBT technology; MMIC; SFDR; direct frequency modulations; double-edge-trigger 8-stage pipeline accumulator; frequency 5 GHz; microwave monolithic integrated circuit; power 2.4 W; sine-weighted DAC-based ROMless architecture; size 1 mum; spurious free dynamic range; ultrahigh-speed direct digital synthesizer; voltage -4.6 V; Frequency modulation; Frequency synthesizers; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Microwave technology; Monolithic integrated circuits; Pipelines; Signal resolution; Accumulator; Double-Edge-Trigger; Gallium Arsenide (GaAs); ROM-less DDS; digital to analog converter (DAC); digital-to-analog converter (DAC); direct digital frequency synthesizer (DDFS); direct digital synthesizer (DDS); heterojunction bipolar transistor (HBT);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524906

Filename

5524906