Ka-band high gain low noise amplifier by Stacked-GCPW transmission line

Author

Chen, Ting-Huei ; Chiu, Hsien-Chin

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2010

fDate

8-11 May 2010

Firstpage

221

Lastpage

224

Abstract

A high gain Ka-band CMOS Low-Noise-Amplifier is proposed in this paper. The CMOS LNA based on 4 stages common source structure. In each stage was connected by Stacked-Grounded-Coplanar-Waveguide transmission line structure in a 0.18-μm CMOS technology to reduce the loss from silicon substrate. The design of two stages noise matching increases the noise isolation between the gain matching stages and noise matching stages. The power gain of the LNA is higher than 20 dB from 30 GHz to 34 GHz with 4 GHz band width. The measured noise about 7 dB from 30 Ghz-34 GHz. The power consumption of the LNA is only 40 mW.

Keywords

CMOS analogue integrated circuits; MIMIC; MMIC amplifiers; coplanar waveguides; low noise amplifiers; millimetre wave amplifiers; 4 stage common source structure; CMOS LNA; bandwidth 4 GHz; frequency 30 GHz to 34 GHz; gain matching stages; high gain Ka-band CMOS low-noise-amplifier; noise isolation; power 40 mW; silicon substrate; size 0.18 mum; stacked-GCPW transmission line; stacked-grounded-coplanar-waveguide transmission line structure; two stage noise matching design; Attenuation; CMOS technology; Coplanar waveguides; Distributed parameter circuits; Frequency; Low-noise amplifiers; Microstrip; Power transmission lines; Silicon; Transmission lines; GCPW; High-Gain; Low-Noise Amplifiers (LNAs); S-GCPW;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524908

Filename

5524908