DocumentCode
3230819
Title
Real time failure analysis of Cu interconnect defectivity through bitmap overlay analysis
Author
Sheth, Vikas R. ; Nguyen, Hai ; Dao, Patrick ; Miscione, A. Mark
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
1999
fDate
1999
Firstpage
8
Lastpage
13
Abstract
Bitmap to in-line defect overlay analysis was performed on a 4 Mbit SRAM memory array, which uses copper interconnect. This analysis provides an effective method of identifying killer copper defects, which inhibit product yield. It has been shown that bitmap overlay (BMOL) analysis is a very effective way of identifying killer defects for any technology at any process step. This can be proven to be a very powerful tool to relate physical defectivity to significant yield loss mechanisms. It has been shown that BMOL can be used to assign a root cause mechanism or a defect to an actual electrical fail without incurring tedious hours of destructive failure analysis. Failure analysis was, however, used to initially verify and confirm root cause of the electrical failures identified by BMOL analysis
Keywords
SRAM chips; copper; failure analysis; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; 4 Mbit; BMOL; Cu; SRAM memory array; bitmap overlay analysis; in-line defect overlay analysis; interconnect defectivity; killer defects; product yield; real time failure analysis; Aluminum; Circuit testing; Copper; Electric resistance; Failure analysis; Inspection; Performance analysis; Random access memory; Research and development; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5217-3
Type
conf
DOI
10.1109/ASMC.1999.798169
Filename
798169
Link To Document