DocumentCode
3230824
Title
Electrical properties of buried oxide layers of low dose SIMOX structures
Author
Afanasev, V. ; Aspar, B. ; Auberton-hervé, A. ; Brown, G. ; Jenkins, W. ; Hughes, H. ; Revesz, A.
Author_Institution
Dept. of Phys., Leuven Univ., Belgium
fYear
1996
fDate
30 Sep-3 Oct 1996
Firstpage
56
Lastpage
57
Abstract
Summary form only given. The bulk and defect conduction as well as electron trapping properties of relatively thin (100 nn) buried oxide (BOX) layers of SIMOX structures have been studied with special emphasis on the effects of the capping oxide layer present during the post-implant high temperature annealing
Keywords
SIMOX; buried layers; electrical conductivity; electron traps; 100 nm; BOX layers; Si; bulk conduction; buried oxide layers; capping oxide layer; defect conduction; electrical properties; electron trapping properties; low dose SIMOX structures; post-implant high temperature annealing; Annealing; Capacitive sensors; Electron traps; Ionization; Laboratories; Programmable logic arrays; Roentgenium; Strain control;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location
Sanibel Island, FL
ISSN
1078-621X
Print_ISBN
0-7803-3315-2
Type
conf
DOI
10.1109/SOI.1996.552491
Filename
552491
Link To Document