Title :
Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements
Author :
Teyssier, J.P. ; Viaud, J.P. ; Raoux, J.J. ; Quere, R.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
A novel approach for nonlinear characterization and modeling of microwave transistors has been developed. The whole process is organized as a set of methods contained in the transistor database. This implies that characterization and modeling are performed in an integrated manner. I(V) and S-parameters are measured on wafer under pulsed conditions, suitable for MESFETs, HEMTs or HBTs as illustrated by the proposed models.<>
Keywords :
S-parameters; automatic test equipment; automatic testing; electronic engineering computing; microwave measurement; microwave transistors; semiconductor device models; semiconductor device testing; HBTs; HEMTs; I/V parameters; MESFETs; S-parameters; device characterization; integrated modeling/characterization system; microwave transistors; nonlinear modeling; onwafer pulsed measurements; transistor database; Circuit simulation; Databases; Equivalent circuits; Microwave transistors; Object oriented modeling; Power measurement; Pulse measurements; Radio frequency; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406148
