DocumentCode
3230961
Title
High-power, narrow-beam, single mode ARROW-type semiconductor diode lasers
Author
Bhattacharya, A. ; Mawst, L.J. ; Nesnidal, M.P. ; Botez, D.
Author_Institution
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Volume
2
fYear
1995
fDate
30 Oct-2 Nov 1995
Firstpage
404
Abstract
Summary form only given. By increasing the interelement optical absorption loss in 0.98 μm-wavelength three-core ARROW-type diode lasers we have achieved, from 20 μm-aperture devices, a diffraction-limited beam pattern to 0.55 W peak-pulsed power with 78% of the light in the central lobe, and near diffraction-limited operation to 0.7 W
Keywords
laser beams; laser modes; laser transitions; optical losses; semiconductor lasers; waveguide lasers; μm-aperture devices; μm-wavelength three-core ARROW-type diode lasers; 0.55 W; 0.7 W; 0.98 mum; 20 mum; central lobe; diffraction-limited beam pattern; high-power narrow-beam single mode ARROW-type semiconductor diode lasers; interelement optical absorption loss; near diffraction-limited operation; peak-pulsed power; Absorption; Apertures; Diode lasers; Laser modes; Laser stability; Optical arrays; Optical losses; Phased arrays; Semiconductor diodes; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-2450-1
Type
conf
DOI
10.1109/LEOS.1995.484773
Filename
484773
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