• DocumentCode
    3231133
  • Title

    Bipolar resistive switching of zinc-tin-oxide resistive random access memory

  • Author

    Murali, Santosh ; Rajachidambaram, Jaana Saranya ; Han, Seung-Yeol ; Chang, Chih-Hung ; Herman, Gregory S. ; Conley, John F., Jr.

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
  • fYear
    2011
  • fDate
    15-18 Aug. 2011
  • Firstpage
    740
  • Lastpage
    743
  • Abstract
    Bipolar switching is reported for the first time using solution deposited amorphous zinc-tin-oxide (ZTO). The impact of compliance current (CC) on the SET voltage, the magnitude of the low and high resistance states, and the switching ratio is investigated for Al/ZTO/Ir resistive random access memory (RRAM) devices.
  • Keywords
    aluminium; amorphous semiconductors; bipolar memory circuits; iridium; random-access storage; resistors; semiconductor switches; zinc compounds; Al-Zn2SnO4-Ir; bipolar resistive switching; compliance current; resistive random access memory; solution deposited amorphous zinc tin oxide; Films; Metals; Physics; Resistance; Switches; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
  • Conference_Location
    Portland, OR
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4577-1514-3
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2011.6144646
  • Filename
    6144646
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3231133