DocumentCode
3231166
Title
Thin film power components with nanoscale electrodes and conformal dielectrics
Author
Raj, P. Markondeya ; Sharma, Himani ; Sethi, Kanika ; Wang, Yushu ; Sundaram, Venky ; Tummala, Rao
Author_Institution
Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
106
Lastpage
110
Abstract
Achieving high capacitance densities with capacitors integrated in thin film form has been a major challenge for the past few decades. Nanocapacitors utilizing nanostructured electrodes and conformal nanodielectrics provide unique opportunities to enhance capacitance volumetric efficiency by 5-10X compared to the state-of-the-art tantalum capacitors. This paper reports the first proof-of-concept demonstration of a novel silicon-compatible high-density capacitor technology. The key novelty stems from the tremendous enhancement in surface area from porous copper nanoelectrodes and conformal alumina dielectric on such nanoelectrodes. Alternative organic package compatible high-density capacitors using etched foils is also presented. Both approaches show substantial improvements in capacitance densities compared to traditional integrated thin film or trench capacitors.
Keywords
dielectric materials; electrodes; elemental semiconductors; etching; integrated circuit packaging; nanoporous materials; silicon; thin film capacitors; Si; capacitance volumetric efficiency enhancement; conformal alumina dielectric; conformal nanodielectric; foil etching; high capacitance density; high-density capacitor; high-density capacitor technology; integrated thin film capacitor; nanocapacitor; nanoscale electrode; nanostructured electrode; organic packaging; porous copper nanoelectrode; surface area enhancement; tantalum capacitor; thin film power component; trench capacitor; Capacitance; Capacitors; Copper; Electrodes; Films; Silicon; Capacitors; Conformal; Integration; Nanodielectrics; Nanoelectrodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144648
Filename
6144648
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