A 10~30-GHz CMOS distributed amplifier for UWB applications

Author

Chen, Chia-Hsun ; Hsu, Hui-Chen ; Feng, Wu-Shiung

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2010

fDate

8-11 May 2010

Firstpage

266

Lastpage

269

Abstract

In this paper, a high bandwidth, low power consumption, and high gain-flatness distributed amplifier (DA) is presented. It is fabricated using a standard 0.13-μm CMOS process with six metal layers. The DA has a unity-gain cutoff frequency of 40GHz. The DA chip achieves measured results of 8dB gain, with a gain flatness of ±1-dB over the bandwidth of 10-30-GHz. And, the noise figure is between 4.2 and 5.7dB. Power consumption and current of the distributed amplifier are 25.2mW and 21mA at 1.2V supply voltage, respectively. Compared with traditional distributed amplifiers, using the cascade distributed amplifier can obtain more gain and better flatness.

Keywords

CMOS analogue integrated circuits; distributed amplifiers; wideband amplifiers; CMOS distributed amplifier; DA chip; UWB applications; bandwidth 10 GHz to 30 GHz; cascade distributed amplifier; current 21 mA; frequency 40 GHz; gain 8 dB; power 25.2 mW; size 0.13 mum; voltage 1.2 V; Bandwidth; CMOS technology; Distributed amplifiers; Distributed parameter circuits; Inductors; MOSFETs; Parasitic capacitance; Power transmission lines; Radio frequency; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524926

Filename

5524926