Thermal circuit model of MQW VCSEL laser

Author

Qi, Chang ; Shi, Xinzhi ; Wang, Gaofeng

Author_Institution

Inst. of Microelectron. & Inf. Technol., Wuhan Univ., Wuhan, China

fYear

2010

fDate

8-11 May 2010

Firstpage

1498

Lastpage

1501

Abstract

A thermal circuit model of multiquantum-well (MQW) Vertical-Cavity Surface-Emitting Lasers (VCSEL) based on a modified rate equation is presented. This model accounts for the thermal and static and dynamic behavior of the MQW VCSEL. A three level scheme for the rate equations has been chosen in order to model carrier transport effects. The introduction of quasi-two-dimensional (quasi-2-D) gateway states between unbound and confined states has been used to calculate, for each well independently, carrier density and gain. This model has been implemented on a SPICE circuit emulator. Numerical examples are introduced to replicate the multi-quantum well VCSEL´s typical dc, Small-signal and transient operation, including temperature-dependent light-current (LI) curves, modulation responses, and diffusive turn-off transients.

Keywords

quantum well lasers; surface emitting lasers; MQW VCSEL laser; SPICE circuit emulator; carrier transport effects; multi-quantum well VCSEL; multiquantum-well vertical-cavity surface-emitting lasers; quasi-2D gateway states; thermal circuit model; Carrier confinement; Charge carrier density; Circuits; Energy states; Equations; High speed optical techniques; Laser modes; Quantum well devices; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5524931

Filename

5524931