Title :
A comparative study of heavily irradiated silicon and nonirradiated SI LEC GaAs detectors
Author :
Biggeri, U. ; Borchi, E. ; Bruzzi, M. ; Eremin, V. ; Leroy, C. ; Li, Z. ; Menichelli, D. ; Pirollo, S. ; Sciortino, S. ; Verbitskaya, E.
Author_Institution :
Dipt. di Energetica, Ist. Nazionale di Fisica Nucl., Florence, Italy
Abstract :
Silicon p+n junctions irradiated with neutron and proton fluences in the range 5×1011 4×1015 cm-2 and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N, of the main radiation-induced deep traps (Et≈0.4÷0.53 eV) is found to increase as N, α f3/2 achieving values up to 5×10 15 cm-3 and a mobility saturation at 100 cm2 /Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested
Keywords :
neutron effects; proton effects; semiconductor counters; silicon radiation detectors; SI LEC GaAs detectors; Si detectors; charge collection efficiencies; deep defects; deep traps; lattice disorder; neutron irradiation; p+n junctions; proton irradiation; Charge measurement; Current measurement; Detectors; Gallium arsenide; Lattices; Neutrons; Performance analysis; Protons; Schottky barriers; Silicon;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672523
