A comparative study of heavily irradiated silicon and nonirradiated SI LEC GaAs detectors

Author

Biggeri, U. ; Borchi, E. ; Bruzzi, M. ; Eremin, V. ; Leroy, C. ; Li, Z. ; Menichelli, D. ; Pirollo, S. ; Sciortino, S. ; Verbitskaya, E.

Author_Institution

Dipt. di Energetica, Ist. Nazionale di Fisica Nucl., Florence, Italy

fYear

1997

fDate

9-15 Nov 1997

Firstpage

114

Abstract

Silicon p⁺n junctions irradiated with neutron and proton fluences in the range 5×10¹¹ 4×10¹⁵ cm^-2 and non-irradiated SI LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N, of the main radiation-induced deep traps (Et≈0.4÷0.53 eV) is found to increase as N, α f^3/2 achieving values up to 5×10 ¹⁵ cm^-3 and a mobility saturation at 100 cm²/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested

Keywords

neutron effects; proton effects; semiconductor counters; silicon radiation detectors; SI LEC GaAs detectors; Si detectors; charge collection efficiencies; deep defects; deep traps; lattice disorder; neutron irradiation; p⁺n junctions; proton irradiation; Charge measurement; Current measurement; Detectors; Gallium arsenide; Lattices; Neutrons; Performance analysis; Protons; Schottky barriers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672523

Filename

672523