Inversion hole mobility in fully depleted SOI PMOSFET´s: measurement and modeling

Summary form only given. The advantages of SOI MOSFETs over bulk MOSFETs are widely recognized. In order to accurately model SOI device operation, it is necessary to understand the behaviour of the channel mobility. The universal behaviour of the effective mobility versus the effective transverse electric field E_eff has been well verified experimentally for bulk MOSFETs. Recently, similar universal behaviour has also been indicated in n-channel FD SOI MOSFETs by experimental results. However, the hole mobility behaviour has seldom been studied. In addition, the physical origin of the universal behaviour of μ_eff for fully depleted SOI MOSFETs is not clear. In this work, the behaviour of the effective channel mobility μ_eff as a function of effective transverse electric field E_eff is reported for p-channel fully depleted SOI devices for a variety of SOI film doping concentrations, applied back-gate bias conditions, and SOI film thicknesses. For the first time, it is demonstrated that the mobility model for bulk Si MOSFETs is also valid for FD SOI MOSFETs