Comparative analysis of switching performance of transistors in SOS process for RF applications

Author

Amirkhanzadeh, Robabeh ; Sjöland, Henrik ; Tikka, Ajay ; Faulkner, Mike

Author_Institution

Centre for Telecommun. & Micro-Electron. CTME, Victoria Univ., Melbourne, VIC, Australia

fYear

2010

fDate

6-9 Dec. 2010

Firstpage

1111

Lastpage

1114

Abstract

Silicon-on-sapphire (SOS) technology is gaining rapid ground in RF applications due to its inherent low parasitic capacitance and the availability of high Q passive components. In this paper, performance of different transistors in SOS technology for switching applications has been verified. Quality factor, OFF performance, and harmonic distortion of all N-types transistors have been simulated and a comparative analysis is provided. Based on this analysis it can be concluded that for the same W/L ratio, NL and IN transistors in the FC process give higher quality factor and also higher C_on/C_off, while in the GC process, IN devices perform best.

Keywords

Q-factor; field effect transistor switches; harmonics; sapphire; silicon; IN transistor; NL transistor; RF applications; SOS process; Si-Al₂O₂; harmonic distortion; off performance; quality factor; silicon-on-sapphire; switching application; transistor switching performance; Capacitors; Performance evaluation; Power transmission lines; Q factor; Radio frequency; Switching circuits; Transistors; SOS; switching performance; transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-7454-7

Type

conf

DOI

10.1109/APCCAS.2010.5775012

Filename

5775012