“No cost” reduced-leakage Schottky diode by ion implantation

Author

Nunes, Benjamin ; Hulfachor, Ron

Author_Institution

MIT, MA, USA

fYear

1999

fDate

1999

Firstpage

172

Lastpage

177

Abstract

Lightly doped drain (LDD) ion implants were used to adjust the barrier height of TiSi₂ and PtSi, n-type Schottky diodes. Thus, low turn-on, low leakage diodes were produced with no extra cost to an existing BiCMOS process. To help predict the performance characteristics of these diodes, a closed form analytical model was derived for determining the effective barrier height of a one dimensional n-type Schottky diode with a shallow p⁺ surface layer. Finally, process and device simulations were utilized to provide physical insight into the diodes´ characteristics

Keywords

Schottky diodes; ion implantation; leakage currents; platinum compounds; semiconductor device models; semiconductor-metal boundaries; titanium compounds; BiCMOS process; LDD ion implants; PtSi; TiSi₂; barrier height adjustment; closed form analytical model; device simulations; effective barrier height; ion implantation; lightly doped drain; low leakage diodes; low turn-on diodes; n-type Schottky diodes; performance characteristics; process simulations; reduced-leakage Schottky diode; shallow p⁺ surface layer; Analytical models; BiCMOS integrated circuits; Capacitance; Costs; Implants; Ion implantation; Schottky diodes; Semiconductor diodes; Silicides; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-5217-3

Type

conf

DOI

10.1109/ASMC.1999.798215

Filename

798215