Title :
“No cost” reduced-leakage Schottky diode by ion implantation
Author :
Nunes, Benjamin ; Hulfachor, Ron
Author_Institution :
MIT, MA, USA
Abstract :
Lightly doped drain (LDD) ion implants were used to adjust the barrier height of TiSi2 and PtSi, n-type Schottky diodes. Thus, low turn-on, low leakage diodes were produced with no extra cost to an existing BiCMOS process. To help predict the performance characteristics of these diodes, a closed form analytical model was derived for determining the effective barrier height of a one dimensional n-type Schottky diode with a shallow p+ surface layer. Finally, process and device simulations were utilized to provide physical insight into the diodes´ characteristics
Keywords :
Schottky diodes; ion implantation; leakage currents; platinum compounds; semiconductor device models; semiconductor-metal boundaries; titanium compounds; BiCMOS process; LDD ion implants; PtSi; TiSi2; barrier height adjustment; closed form analytical model; device simulations; effective barrier height; ion implantation; lightly doped drain; low leakage diodes; low turn-on diodes; n-type Schottky diodes; performance characteristics; process simulations; reduced-leakage Schottky diode; shallow p+ surface layer; Analytical models; BiCMOS integrated circuits; Capacitance; Costs; Implants; Ion implantation; Schottky diodes; Semiconductor diodes; Silicides; Voltage;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5217-3
DOI :
10.1109/ASMC.1999.798215
