Accurate measurement of pass-transistor leakage current in SOI MOSFET´s

Summary form only given. Recently, a transient pass-transistor leakage current unique to SOI MOSFETs was reported. It was pointed out that this current, which is caused by device floating-body effects, can impact SOI SRAM and DRAM circuits. Clearly, the magnitude of this current and its dependencies are of prime importance. Here, we report an accurate method of measuring this current. We also, experimentally establish its important temperature, device, and bias dependencies. The SOI devices used in the experiment are partially depleted MOSFETs. The gate oxide thickness, silicon film thickness, and buried oxide thickness are 4.5 nm, 180 nm, and 370 nm, respectively. Our study is limited to NMOSFETs, although the results are extendible to PMOSFETs