Fabrication of Geiger mode avalanche photodiodes

Author

Kindt, W.J. ; van Zeijl, H.W.

Author_Institution

Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands

fYear

1997

fDate

9-15 Nov 1997

Firstpage

334

Abstract

As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, the individual pixels are made. A CMOS compatible technology is used, to allow the future integration of the pixels in an array with readout electronics. A model for afterpulsing is presented that relates the afterpulsing probability to the concentration and capture cross section of the traps in the depletion layer. Also a trap assisted tunneling model is used to explain the bias voltage and temperature dependence of the dark count rate. Measured results on the fabricated devices are compared with the described theory

Keywords

CMOS integrated circuits; Geiger counters; avalanche photodiodes; nuclear electronics; position sensitive particle detectors; CMOS compatible technology; Geiger mode avalanche photodiodes fabrication; afterpulsing probability; bias voltage; dark count rate; depletion layer; individual pixels; readout electronics; temperature dependence; trap assisted tunneling; Avalanche photodiodes; CMOS technology; Diodes; Electric breakdown; Electron traps; Extraterrestrial measurements; Fabrication; Semiconductor device modeling; Stimulated emission; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672597

Filename

672597