Low-frequency properties of lattice matched and strained InGaAs/InAlAs HEMTs

Author

Ng, G.I. ; Reynoso, A. ; Oh, J.E. ; Pavlidis, D. ; Graffeuil, J. ; Bhattacharya, P.K. ; Weiss, M. ; Moore, K.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1989

fDate

7-9 Aug 1989

Firstpage

73

Lastpage

82

Abstract

The low-frequency characteristics of lattice-matched (x=0.53) and strained (0.60⩽x⩽0.70) In_xGa_1-xAs/InAlAs HEMTs (high-electron-mobility transistors) are studied. Low-frequency noise measurements reveal shallow traps of 0.078 eV to 0.18 eV which have a slight dependence on In composition. The input noise spectra are almost insensitive to In percentage, but the output spectra suggest that the noise increases with strain. This is related to the increase of device gain with In composition and indicates that a compromise has to be made between high gain (large excess In %) and low noise (low excess In %). Transconductance dispersion is observed only under large gate bias and is absent when the device is biased for maximum g_m. Trap densities seem to be largest for lattice-matched devices and minimum for 60% In channels

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device testing; In composition; InGaAs-InAlAs; LF noise; device gain; high-electron-mobility transistors; input noise spectra; large gate bias; lattice matched HEMTs; low-frequency characteristics; output spectra; shallow traps; strained HEMTs; transconductance dispersion; trap densities; Contracts; Frequency; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; Low-frequency noise; MODFETs; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

Type

conf

DOI

10.1109/CORNEL.1989.79823

Filename

79823