DocumentCode :
3232140
Title :
Polysilicon overfill etch back using wet chemical spin-process technology. An alternative to traditional dry etch and CMP technigues
Author :
Sax, Harald ; Kruwinus, Hans ; Waters, Edward A.
Author_Institution :
SEZ AG, Villach, Austria
fYear :
1999
fDate :
1999
Firstpage :
233
Lastpage :
238
Abstract :
Wet chemical etch techniques have been used in semiconductor manufacturing since the advent of the industry. As device geometry´s have shrunk, wet etching has been replaced by various dry etch and chemical mechanical polishing (CMP) techniques. In most cases it has been relegated to non-critical bulk film removal applications. Recent innovations in single wafer wet processing hardware and chemistries have given new life and applications to traditional wet etch techniques. In this study we investigated the feasibility of using a single wafer spin-processor chemically enhanced polish (CEP) system with automated endpoint capability for the removal and planarization of polysilicon over-fill in a deep trench isolation application as an alternative to dry etch and CMP techniques
Keywords :
elemental semiconductors; etching; integrated circuit manufacture; isolation technology; polishing; process control; silicon; HF; HNO3; Si; automated endpoint capability; deep trench isolation application; optimal process control; planarization; polysilicon overfill etch back; single wafer spin-processor chemically enhanced polish system; single wafer wet processing hardware; structure dimensions; wet chemical spin-process technology; Chemical industry; Dry etching; Geometry; Hardware; Manufacturing industries; Planarization; Semiconductor device manufacture; Semiconductor films; Technological innovation; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-5217-3
Type :
conf
DOI :
10.1109/ASMC.1999.798231
Filename :
798231
Link To Document :
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