• DocumentCode
    3232287
  • Title

    Investigation of the formation of undercut during the fabrication of silicon microchannels by electrochemical etching

  • Author

    Jilei Lin ; Xiaoming Chen ; Shaohui Xu ; Peisheng Xin ; Lianwei Wang

  • Author_Institution
    Dept. of Electron. Eng., East China Normal Univ., Shanghai
  • fYear
    2008
  • fDate
    6-9 Jan. 2008
  • Firstpage
    74
  • Lastpage
    77
  • Abstract
    Silicon microchannel plates have been explored intensively for numerous applications especially for weak light detection and night vision. The electrochemical etching in hydrofluoric acid-based solutions is known as a technique for porous silicon formation. This paper presents a new process for the formation of microchannel structure and the separation of the Si MCP from p-type starting substrates by a single-step electrochemical etching in HF-based electrolytes. High aspect ratio microchannels are fabricated by electrochemical etching and the conditions under which the undercut occurs are investigated. The formation of the undercut is found to be primarily determined by both current density and HF concentration, which determine the MCP structure thickness as well.
  • Keywords
    electrochemical machining; electrolytes; etching; microchannel plates; substrates; HF; HF-based electrolytes; Si; electrochemical etching; fabrication; hydrofluoric acid-based solutions; night vision; porous silicon formation; silicon microchannel plates; substrates; undercut; weak light detection; Current density; Fabrication; Hafnium; Laboratories; Microchannel; Silicon; Substrates; Systems engineering and theory; Transducers; Wet etching; HF concentration; high aspect ratio; microchannel; undercut;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on
  • Conference_Location
    Sanya
  • Print_ISBN
    978-1-4244-1907-4
  • Electronic_ISBN
    978-1-4244-1908-1
  • Type

    conf

  • DOI
    10.1109/NEMS.2008.4484289
  • Filename
    4484289