• DocumentCode
    3232646
  • Title

    Mixed technology of ion implantation and heteroepitaxy: ion-implanted InxGa1-xAs/GaAs MESFETs

  • Author

    Wang, G.W. ; Feng, M. ; Kaliski, R. ; Liaw, Y.P. ; Lau, C. ; Ito, C.

  • Author_Institution
    Ford Microelectron. Inc., Colorado Springs, CO, USA
  • fYear
    1989
  • fDate
    7-9 Aug 1989
  • Firstpage
    111
  • Lastpage
    118
  • Abstract
    State-of-the-art FET performance with ft´s of 55 and 61 GHz has been achieved using 0.5-μm-gate In0.1Ga 0.9As and graded InxGa1-xAs MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In0.1Ga0.9As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion implantation; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.5 micron; 55 GHz; 61 GHz; In0.1Ga0.9As MESFET; InxGa1-xAs-GaAs; MOCVD; Schottky gate; cutoff frequency; gate length; graded-material MESFET; heteroepitaxy; ion implantation; long-wavelength fiber-optic communication; material growth; Gallium arsenide; HEMTs; Indium gallium arsenide; Ion implantation; Lattices; MESFETs; MOCVD; Photonic band gap; Schottky barriers; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1989. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • Type

    conf

  • DOI
    10.1109/CORNEL.1989.79826
  • Filename
    79826
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3232646