Comparison of device performance and scaling properties of cylindrical-nanowire (CNW) and carbon-nanotube (CNT) transistors

Author

Gnani, E. ; Marchi, A. ; Reggiani, S. ; Rudan, M. ; Baccarani, G.

Author_Institution

Dept. of Electron., Bologna Univ.

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

23

Lastpage

26

Abstract

In this work we investigate the performance of cylindrical nanowire (CNW) and carbon-nanotube (CNT) FETs at their extreme miniaturization limits. The model self-consistently solves the Poisson and the quantum transport equations using the formalism of the quantum transmitting boundary method (QTBM). The performance comparison between CNW- and CNT-FETs with the same diameter demonstrates that the CNW-FET provides a better scaling trend at very low sizes

Keywords

Poisson equation; carbon nanotubes; field effect transistors; nanoelectronics; nanotube devices; nanowires; semiconductor device models; Poisson equation; carbon-nanotube transistors; cylindrical-nanowire FET device performance; miniaturization limitation; quantum transmitting boundary method formalism; quantum transport equations; scaling properties; Analytical models; CMOS technology; Carbon nanotubes; Electrostatics; FETs; Geometry; MOSFETs; Nanoscale devices; Poisson equations; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282829

Filename

4061572