DocumentCode
3232767
Title
Partial coherence optimization for printing chain contacts using an attenuated phase-shifting mask
Author
Toth, Timothy ; Viens, Penney ; Coker, Eric ; Winslow, Arthur ; Colelli, James
Author_Institution
IBM Microelectron. Div., Essex Junction, VT, USA
fYear
1999
fDate
1999
Firstpage
368
Lastpage
371
Abstract
Attenuated phase-shifting masks (APSM) are being used to push the limits of optical lithography. When compared to conventional chrome-on-glass (COG) masks, improvements in both minimum resolution and total process window are observed. However, these improvements are not always realized because a phenomenon called `side lobes´ can generate undesirable printed defects, thereby reducing the total process window. An attenuated phase-shifting mask was used to print isolated and chain contacts on an I-line stepper. The side lobe-limited process window for this process was maximized by optimizing the partial coherence and dose required to print both features
Keywords
phase shifting masks; photolithography; I-line stepper; attenuated phase-shifting mask; chain contacts printing; isolated contacts; minimum resolution; optical lithography; optimized dose; partial coherence optimization; reticle size; side lobes; small print bias; total process window; Contacts; Etching; Glass; Lenses; Lithography; Microelectronics; Optical attenuators; Printing; Resists; Rivers;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5217-3
Type
conf
DOI
10.1109/ASMC.1999.798267
Filename
798267
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