Physical Model of Incomplete Ionization for Silicon Device Simulation

Author

Schenk, Andreas ; Altermatt, Pietro P. ; Schmithusen, Bernhard

Author_Institution

Integrated Syst. Lab., ETH Zurich

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

51

Lastpage

54

Abstract

An empirical model of incomplete ionization (ii) in phosphorus-, arsenic-, and boron-doped crystalline silicon is derived from photoluminescence, conductance, and mobility measurements. It is found that up to 25% of phosphorus and boron atoms and up to 35% of arsenic atoms are non-ionized at room temperature near the Mott transition, whereas there is no significant amount of ii at dopant densities far above the Mott transition. Simplified equations of ii suitable for implementation in device simulators are exploited to study the effect of ii on the performance of bipolar and MOS devices. It is demonstrated that ii can increase the current gain of bipolar transistors by up to 25%

Keywords

MIS devices; arsenic; bipolar transistors; boron; carrier mobility; elemental semiconductors; metal-insulator transition; phosphorus; photoluminescence; semiconductor device models; semiconductor doping; silicon; 293 to 298 K; MOS devices; Mott transition; Si:As; Si:B; Si:P; arsenic-doped crystalline silicon; bipolar transistors; boron-doped crystalline silicon; carrier mobility measurements; current gain; dopant densities; ionization level; phosphorus-doped crystalline silicon; photoluminescence; physical model; silicon device simulation; Atomic measurements; Bipolar transistors; Boron; Crystallization; Equations; Ionization; MOS devices; Photoluminescence; Silicon devices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282836

Filename

4061579