The performance of thin barrier InAlN/AlN/GaN MIS HEMT with high dielectric insulators

High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material. High transconductance 200 mS/mm was obtained with 1um gate length. The influence of the high dielectric BST material on the performance of the MIS structure is also investigated.