Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon

Author

Karlowatz, G. ; Ungersboeck, E. ; Wessner, W. ; Kosina, H.

Author_Institution

Inst. for Microelectron., TU Wien

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

63

Lastpage

66

Abstract

Full-band Monte Carlo simulations of electron transport in bulk silicon under several strain conditions are performed. The band structures of Si for arbitrary stress and strain conditions are calculated using the empirical non-local pseudopotential method. To restrict the EPM calculation to the smallest possible domain the symmetry properties for a given stress condition are taken into account. Results for biaxially strained Si grown on a [001] oriented Si_1-xGe_x substrate and for uniaxial tensile stress in [110] direction exhibit a high mobility enhancement. The effective masses and the energy splitting of the valleys extracted from the band structure explain the mobility gain observed in the simulation results. It is shown that the effective masses can change considerably under certain stress conditions

Keywords

Monte Carlo methods; conduction bands; crystal symmetry; effective mass; electrical conductivity; electron mobility; elemental semiconductors; pseudopotential methods; silicon; Si; Si_1-xGe_x; band structure; band structures; biaxially strained silicon; bulk silicon; carrier mobility enhancement; conductivity effective masses; crystal symmetry properties; electron transport; empirical nonlocal pseudopotential method; full-band Monte Carlo simulation; uniaxial tensile stress; valley splitting; Capacitive sensors; Conductivity; Effective mass; Electrons; Lattices; Microelectronics; Monte Carlo methods; Silicon; Substrates; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282839

Filename

4061582