3D Monte Carlo Device Simulation of NanoWire MOSFETs including Quantum Mechanical and Strain Effects

Author

Ghetti, Andrea ; Rideau, Denis

Author_Institution

Adv. R&D, STMicroelectron., Brianza

fYear

2006

fDate

6-8 Sept. 2006

Firstpage

67

Lastpage

70

Abstract

In this paper we report on 3D Monte Carlo device simulation of silicon nanowire MOSFETs including quantum mechanical and strain effects. The newly developed simulator solves self-consistently in 1D, 2D or 3D the Schrodinger Eq. for the quantum mechanical correction of the potential, while mechanical strain effects are accounted for by an appropriate change of the band structure. The simulation program has been then applied to the simulation of silicon nanowire MOSFETs achieving a good agreement with experimental data, demonstrating the feasibility of 3D semi-classical Monte Carlo simulation with quantum mechanical correction for very advanced devices

Keywords

MOSFET; Monte Carlo methods; Schrodinger equation; band structure; elemental semiconductors; mechanical strength; nanoelectronics; nanowires; semiconductor device models; silicon; 3D semiclassical Monte Carlo device simulation; Schrodinger equation; Si; band structure; mechanical strain effects; quantum mechanical correction; silicon nanowire MOSFET; Capacitive sensors; Circuit optimization; Computational modeling; MOSFETs; Monte Carlo methods; Nanoscale devices; Particle scattering; Quantum mechanics; Research and development; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Conference_Location

Monterey, CA

Print_ISBN

1-4244-0404-5

Type

conf

DOI

10.1109/SISPAD.2006.282840

Filename

4061583