Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform segment spacing

Author

Chen, Liang ; Zhang, Wan-Rong ; Jin, Dong-yue ; Xiao, Ying ; Wang, Ren-qing ; Hu, Ning

Author_Institution

Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China

fYear

2010

fDate

8-11 May 2010

Firstpage

664

Lastpage

666

Abstract

A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and nonuniform segment spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 427.465 K to 417.03 K, the thermal resistance reduce from 170 K/W to 156 K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.

Keywords

heterojunction bipolar transistors; silicon compounds; temperature distribution; thermal analysis; ANSYS software; SiGe; emitter structure; maximum junction temperature; multifinger power SiGe heterojunction bipolar transistor; nonuniform segment spacing; segmented emitter fingers; temperature distribution; ten-finger power SiGe HBT; thermal analysis; thermal simulation; thermal stability; Contracts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Silicon germanium; Temperature distribution; Thermal engineering; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5705-2

Type

conf

DOI

10.1109/ICMMT.2010.5525017

Filename

5525017